Related papers: High intensity study of THz detectors based on fie…
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…
We report the observation and comprehensive study of the complex nonlinear intensity dependence of the magneto-photogalvanic effect (MPGE) current induced by terahertz (THz) radiation in Cd$_{x}$Hg$_{1-x}$Te films with inverted ($x = 0.15$)…
State-of-the-art metallic terahertz (THz) emitters rely predominantly on spintronic heterostructures, where heavy metals serve as passive spin-to-charge converters. Here, we demonstrate efficient THz radiation from standalone Pt nanofilms…
Spintronic terahertz emitters (STEs) generate broadband terahertz (THz) radiation, which is essential for spectroscopy, imaging, and communication. The performances and the essential physical parameters of STE devices are linked to the…
Irradiation of a thin metallic wire with an intense femtosecond laser pulse creates a strong discharge wave that travels as a narrow pulse along the wire surface. The travelling discharge efficiently emits secondary radiation with spectral…
While field-driven electron emission is theoretically understood down to the subcycle regime, its direct experimental temporal characterization using long-wavelength terahertz (THz) fields remains elusive. Here, by driving a graphite tip…
Topological insulator materials have been extensively studied in the field of condensed matter physics because nontrivial topology in the electronic state gives rise to a novel spin-polarized Dirac dispersion on the surface. To describe the…
High-Tc cuprate, A3C60 and other unconventional superconductors (SCs) have very high Tc with respect to the energy scale of superconducting (SC) charges inferred from the superfluid density (SFD). The observed linear dependence of Tc on the…
Terahertz (THz)-based electron manipulation has recently been shown to hold tremendous promise as a technology for manipulating and driving the next-generation of compact ultrafast electron sources. Here, we demonstrate an ultrafast…
Measuring terahertz waveforms in terahertz spectroscopy often relies on electrooptic sampling employing a ZnTe crystal. Although the nonlinearities in such zincblende semiconductors induced by intense terahertz pulses have been studied at…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
Direct laser electron acceleration in near-critical density plasma produces collimated electron beams with high charge $Q$ (up to $\mu$C). This regime could be of interest for high energy THz radiation generation, as many of the mechanisms…
Terahertz (THz) near-field imaging is a flourishing discipline [1], with applications from fundamental studies of beam propagation [2,3] to the characterisation of metameterials [4,5] and waveguides [6,7]. Beating the diffraction limit…
Terahertz (THz) polarization detection provides critical insights into material properties but faces a fundamental constraint upon miniaturization: subwavelength metallic electrodes induce strong localization and distortion of the incident…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
High absorption in a wide frequency band has attracted considerable interest since their potential applications in frequency spectrum imaging systems and anti-radar cloaking. In this paper, a polarization-independent, ultra-broadband and…
Terahertz (THz) technology is a cutting-edge scheme with various promising applications, such as next generation telecommunication, non-destructive evaluation, security check, and in-depth characterization, owing to their sensitivity to…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light…
A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the…