Related papers: Three-axis Hall transducer based on semiconductor …
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…
Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…
We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $\nu$: $\nu =1$ (integer quantum Hall…
We investigate the phase structure and conductivity of a relativistic fluid in a circulating electric field with a transverse magnetic field. This system exhibits behavior similar to other driven systems such as strongly coupled driven CFTs…
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…
Atomically thin oxides are increasingly recognized as an emerging class of 2D materials, yet their multifunctional properties have been far less investigated compared to other layered materials. Among these, gallium oxide is distinguished…
Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the…
Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and…
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $\mu \approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we…
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted…
In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage…
Shielding sensitive scientific and medical devices from the magnetic field environment is one of the promising applications of superconductors. Magnetic field concentration by superconducting magnetic lenses is the opposite phenomenon…
Three-dimensional particle-in-cell simulations are employed to investigate electron transport characteristics in Hall thrusters, with particular focus on how magnetic field configuration affects the electron transport due to electron drift…