Related papers: Three-axis Hall transducer based on semiconductor …
A Hall magnetometer with variable sensitivity is constructed to measure the magnetic properties of magnetic nanoparticles manufactured by different methods. This novel magnetometer can also be used to measure bulk materials and samples in…
This paper presents a method for determining the conductance matrix of multi terminal semiconductor structures with edge channels. This method appears to be applied within frameworks of the ordinary Landauer - uttiker formalism for the…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the…
An attempt to adapt the study of color flux tubes to the case of finite temperature has been made. The field is measured both through the correlator of two Polyakov loops, one of which connected to a plaquette, and through a connected…
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…
The topic of this contribution is the investigation of quantum states and quantum Hall effect in electron gas subjected to a periodic potential of the lateral lattice. The potential is formed by triangular quantum antidos located on the…
The improvement of accelerator parameters requires the transition to superconducting undulator technologies since SCUs allow higher magnetic fields compared to classical planar undulators with the same gap. The primary method for…
A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps…
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device…
We study tunneling in semiconductor heterostructures where the constituent materials can have a direct or indirect bandgap. In order to have a good description of the lowest conduction band, we have used the nearest-- neighbour $sp^3s^*$…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
Magnus Hall effect (MHE) is a non-linear Hall effect requiring no external magnetic field, which can be observed when an in-built electric field couples to the Berry curvature of the bandstructure, producing a current in the transverse…
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…
We present thermal conductivity measurements performed in three short-period (GaAs)_9(AlAs)_5 superlattices. The samples were grown at different temperatures, leading to different small scale roughness and broadening of the interfaces. The…
Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring,…
The objective of this paper is all-angle artificial magnetic conductor, i.e. artificial magnetic conductor that has stable magnetic-wall effect with respect to the incidence angle. Furthermore, we seek for a design that would be easy for…
Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…