Related papers: Mechanically induced pseudo-magnetic fields in the…
The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We…
The dynamics of an exciton-LO-phonon system after an ultrafast optical excitation in an InAs/GaAs quantum dot is studied theoretically. Influence of anharmonic phonon damping and its interplay with the phonon dispersion is analyzed. The…
We consider theoretically the formation and stability of quasi-one dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for…
We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are…
Various properties of interlayer excitons in double-layer transition metal dichalcogenides quantum dots are analyzed using a low-energy effective Hamiltonian with Coulomb interaction. We solve the single-particle Hamiltonian with and…
We report the direct observation of quantum coupling in individual quantum dot molecules and its manipulation using static electric fields. A pronounced anti-crossing of different excitonic transitions is observed as the electric field is…
We present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of…
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…
We derive a general formalism to model the polariton states resulting from the radiation-matter interaction between an arbitrary number of excitonic transitions in semiconductor quantum dots and photon modes in a photonic crystal structure…
We report on some surprising optical properties of diluted nitride InGaAs_(1-y)N_y /GaAs (y<<1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence…
We present both experimental and theoretical results on the influence of a magnetic field on excitons in semiconductor quantum dots. We find a pronounced difference between the strong and weak confinement regimes. For weak confinement, the…
We show that through the resonant optical excitation of spin-polarized excitons into CdMnTe magnetic quantum dots, we can induce a macroscopic magnetization of the Mn impurities. We observe very broad (4 meV linewidth) emission lines of…
We formulate a full quantum mechanical theory of the interaction between electromagnetic modes in photonic crystal slabs and quantum well excitons embedded in the photonic structure. We apply the formalism to a high index dielectric layer…
Shift current transient are obtained for near band gap excitation of bulk GaAs by numerical solutions of the semiconductor Bloch equations in a basis obtained from a 14 band k.p model of the band structure. This approach provides a…
A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon…
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable…
We studied theoretically the excitonic energy levels and the optical absorption spectra for double quantum wells, both symmetric and asymmetric, in the presece of an homogeneous magnetic field. Within the effective mass approach, we…
We consider a square lattice configuration of circular gate-defined quantum dots in an unbiased graphene sheet and calculate the electronic, particularly spectral properties of finite albeit actual sample sized systems by means of a…
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…
The spectral properties of one exciton trapped in a self-assembled multi-layered quantum dot is obtained using a high precision variational numerical method. The exciton Hamiltonian includes the effect of the polarization charges, induced…