English

Charged excitons and biexcitons in laterally coupled InGaAs quantum dots

Mesoscale and Nanoscale Physics 2010-12-22 v1 Materials Science

Abstract

We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are laterally aligned InGaAs quantum dot molecules embedded in GaAs under a lateral electric field. The rather simple energetic of excitons becomes more complex in the case of charged quasiparticles but remains tractable. The negative trion spectrum shows four anticrossings in the presently available range of fields while the positive trion shows two. The magnitude of the anticrossings reveals many-body effects in the carrier tunneling process that should be experimentally accessible.

Keywords

Cite

@article{arxiv.1012.4575,
  title  = {Charged excitons and biexcitons in laterally coupled InGaAs quantum dots},
  author = {Jie Peng and Gabriel Bester},
  journal= {arXiv preprint arXiv:1012.4575},
  year   = {2010}
}

Comments

9 Pages, 9 Figures, 3 Pages. High quality figures at http://www.fkf.mpg.de/bester/publications.html

R2 v1 2026-06-21T17:02:14.336Z