Related papers: Integrated GaN photonic circuits on silicon (100) …
Optical nonlinearity plays a pivotal role in quantum information processing using photons, from heralded single-photon sources, coherent wavelength conversion to long-sought quantum repeaters. Despite the availability of strong dipole…
Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers,…
We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal…
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…
Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a…
On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these…
Integrated thin-film lithium niobate platform has recently emerged as a promising candidate for next-generation, high-efficiency wavelength conversion systems that allow dense packaging and mass-production. Here we demonstrate efficient,…
Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we…
Efficient nonlinear wave mixing is of paramount importance for a wide range of applications. However, weak optical nonlinearities pose significant challenges for accessing nonlinear light-matter interaction in compact systems. Here, we…
Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…
Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies…
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
Integrated silicon nitride (Si3N4) resonators have emerged as a leading platform for nonlinear photonics, yet generating light at wavelength in the ultraviolet (UV) has remained elusive in single-resonator systems. Here we report the first…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…