Related papers: Integrated GaN photonic circuits on silicon (100) …
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
We investigate Second Harmonic Generation from individual silicon nanowires and study the influence of resonant optical modes on the far-field nonlinear emission. We find that the polarization of the Second Harmonic has a size-dependent…
Thin-film lithium niobate (TFLN) based optical microresonators offer large nonlinear coefficient d_33 and high light-wave confinement, allowing highly efficient second-order optical nonlinear frequency conversion. Here, we achieved…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
Using aluminum-nitride photonic-chip waveguides, we generate optical-frequency-comb supercontinuum spanning from 500 nm to 4000 nm with a 0.8 nJ seed pulse, and show that the spectrum can be tailored by changing the waveguide geometry.…
Nanophotonic supercontinuum generation offers a practical route to chip-based f-2f interferometry by leveraging coexisting chi(2) and chi(3) nonlinearities. In conventional uniform waveguides, the phase-matching bandwidth for…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
Second harmonic generation (SHG) is prohibited in centrosymmetric crystals such as silicon or germanium due to the presence of inversion symmetry. However, the structuring of such materials makes it possible to break the inversion symmetry,…
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as…
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring…
Silicon nitride (Si$_3$N$_4$) is an ever-maturing integrated platform for nonlinear optics. Yet, due to the absence of second-order ($\chi^{(2)}$) nonlinearity, Si$_3$N$_4$ is mostly considered for third-order ($\chi^{(3)}$) nonlinear…
It has been recently suggested that the nonlinear optical processes in plasmonic nanoantennas allow for a substantial boost in the sensitivity of plasmonic sensing platforms. Here we present a sensing device based on an array of…
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase…
We experimentally study nonlinear generation of the second harmonic by backward volume spin waves propagating in microscopic magnonic waveguides fabricated from a low-loss magnetic insulator with a thickness of several tens of nanometers.…
The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…
We demonstrate a simple and scalable approach to increase conversion efficiencies of nonlinear metasurfaces by incorporating them into multipass cells and by letting the pump beam to interact with the metasurfaces multiple times. We…
Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
We investigate the generation of ultraviolet (UV) second-harmonic radiation on the boundary of a UV transparent crystal, which is derived from the automatic partial phase matching of the incident wave and the total internal reflection. By…