Related papers: Thickness Estimation of the Si Thin Films: a Simul…
In this paper, a thin film thickness gauge based on the interferometric principle of Y-shaped optical fiber is proposed to achieve accurate measurement of film thickness. In this paper, the optical fiber, the interferometric principle and…
A technique for measuring high-energy electrons using Si detectors of various thicknesses that are much smaller than the range of the examined electrons is presented. The advantages of the method are discussed on the basis of…
Thin liquid films are ubiquitous in natural phenomena and technological applications. They have been extensively studied via deterministic hydrodynamic equations, but thermal fluctuations often play a crucial role that needs to be…
We performed X-ray photoelectron spectroscopy (XPS) measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and the capacitance of the thin film. The measurement consists of…
In the present work performance of cesium iodide thin film photocathode is studied in detail. The optical absorbance of cesium iodide thin films have been analyzed in the spectral range of 190 nm to 900 nm. The optical band gap energy of…
Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop…
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical…
The effect of thickness on the width of the percolation threshold in metal-dielectric composite films was examined. The distribution of current intensities through cubic networks of metal and dielectric components was determined using…
A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its…
Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer film. However, the analysis of ultrathin films is complicated by the correlation of the dielectric…
In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…
The electronic properties of thin films present quantum-size effects, which are a consequence of the finite size of the system. Here we focus on the investigation of these effects on the electronic energy loss of charged particles moving…
The performance of cesium iodide as a reflective photocathode is presented. The absolute quantum efficiency of a 500 nm thick film of cesium iodide has been measured in the wavelength range 150 nm to 200 nm. The optical absorbance has been…
In-situ monitoring and calibration of nano-sculptured thin film thickness is a critical problem due to substrate tilt angle dependent porosity and mass flux. In this letter we present an analytical model for thickness dependence on…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
In this work, optical profilometry and finite-element simulations are applied on buckled micro-machined membranes for the stress analysis of ion-beam-sputtered $\mathrm{Ta_{2}O_{5}}$ and $\mathrm{SiO_{2}}$ thin films. Layers with different…
Structural and optical studies have been performed on the thermally-evaporated "as-deposited" and "humid air aged" CsI thin films. The structural analysis for both "as-deposited" and "humid air aged" films shows a well-oriented peaks…