Related papers: Spin Drift in Highly Doped n-type Si
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…
Ambient-pressure superconductivity in compressively strained bilayer nickelate films enables direct spectroscopic tests of pairing scenarios, yet how magnetism evolves with carrier doping remains largely unexplored. Here we use Ni…
Spectroscopic data on alkali-atom dimers residing on the surface of liquid helium nanodroplets have revealed that they are detected primarily in the weakly bound, metastable, spin-triplet state. Here, by measuring the magnetic Stern-Gerlach…
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the…
We study the spin transport phenomena in two-dimensional graphene-like materials with arbitrary tilted Dirac cones. The tilt arises due to next-nearest hopping when the bottom of the conduction band and top of the valence band does not…
We study the spin dynamics in a high-mobility two dimensional electron gas (2DEG) with generic spin-orbit interactions (SOIs). We derive a set of spin dynamic equations which capture the purely exponential to the damped oscillatory spin…
Spintronics is an analogue to electronics where spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two the…
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time.…
We present single-crystal neutron-diffuse-scattering measurements with polarization analysis on the spin ice Ho2-xYxTi2O7 (x = 0, 0.3, and 1). At 2 K, the spin flip scattering patterns are typical of a nearest-neighbor spin ice and the…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low…
The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local…
We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the…
Based on the time-dependent Gutzwiller approximation for the extended Hubbard model we calculate the energy and momentum dependence of spin excitations for striped ground states. Our starting point correctly reproduces the observed doping…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…
The magneto-optical longitudinal, transverse Hall and circularly-polarized response of silicene and other materials described by a Kane-Mele Hamiltonian are calculated. Particular attention is paid to the effects of an external electric…
Graphene halfly doped with H or F possesses local magnetization at the undoped C sites. Thus the Seebeck coefficient is different for each spin channel and its sign also changes depending on the spin polarization. Deposition of doped…