The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.
@article{arxiv.cond-mat/0310107,
title = {Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well},
author = {V. T. Dolgopolov and E. V. Deviatov and A. A. Shashkin and U. Wieser and U. Kunze and G. Abstreiter and K. Brunner},
journal= {arXiv preprint arXiv:cond-mat/0310107},
year = {2007}
}