Related papers: GaAs Quantum Dot Thermometry Using Direct Transpor…
Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy…
A simple hot electron thermocouple is realized in a two-dimensional electron system (2DES) and used to measure the diffusion thermopower of the 2DES at zero magnetic field. This hot electron technique, which requires no micron-scale…
Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
The temperature measurement of material inside of an object is one of the key technologies for control of dynamical processes. For this purpose, various techniques such as laser-based thermography and phase-contrast imaging thermography…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
We present a parallel network of 16 demagnetization refrigerators mounted on a cryofree dilution refrigerator aimed to cool nanoelectronic devices to sub-millikelvin temperatures. To measure the refrigerator temperature, the thermal motion…
Resonant laser spectroscopy of a negatively charged self-assembled quantum dot is utilized to measure the temperature of a three dimensional fermionic reservoir down to 100mK. With a magnetic field applied to the quantum dot the single…
We calculate the conductance through a quantum dot weakly coupled to metallic leads, modeled by the spin-1/2 Anderson model with finite Coulomb repulsion $U$. We adopt the non-crossing approximation method in its finite-$U$ extension…
We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We study the temperature dependence of the electrical conductance of a clean strongly interacting quantum wire in the presence of a helical nuclear spin order. The nuclear spin helix opens a temperature-dependent partial gap in the electron…
We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which…
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage…
We analyze electron transport through a quantum shuttle for the applied voltage below the instability threshold. We obtain current-voltage characteristics of this system and show that at low temperature they exhibit pronounced steps. The…
Electrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.3-4.2 K temperature range in a AlGaAs/GaAs multiple quantum well sample at the filling factor at 5.7 T. In the particular…