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Related papers: Comprehensive ab initio study of doping in bulk Zn…

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We propose an extension to other high T_{c } compounds of a model introduced earlier for YBCO. In the ''self-doped'' compounds we assume that the doping part (namely the BiO, HgO, TlO planes in BSCCO, HBCCO, TBCCO respectively) is metallic,…

Superconductivity · Physics 2009-10-30 R. Combescot

In this work we aim at understanding the effect of n-type and p-type substitutional doping in the case of matrix-embedded and freestanding Si nanocrystals. By means of ab-initio calculations we identify the preferential positioning of the…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 Roberto Guerra , Stefano Ossicini

Recently, geometry-induced quantum effects in periodic Si nanostructures were introduced and observed. Nanograting has been shown to originate geometry induced doping or G-doping. G-doping is based on reduction of density of quantum states…

Applied Physics · Physics 2019-04-19 A. Tavkhelidze , L. Jangidze , G. Skhiladze

We present a model for typical charged defects in weakly doped Y1-xCaxVO3 perovskites and study how they influence the magnetic and orbital order. Starting from a multiband Hubbard model, we show that the charge carriers introduced by…

Strongly Correlated Electrons · Physics 2013-01-18 Peter Horsch , Andrzej M. Oles

We investigate charge distribution in the recently discovered high-$T_c$ superconductors, layered nickelates. With increasing value of charge-transfer energy we observe the expected crossover from the cuprate to the local triplet regime…

Strongly Correlated Electrons · Physics 2021-10-13 Tharathep Plienbumrung , Michael Schmid , Maria Daghofer , Andrzej M. Oleś

Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be…

Materials Science · Physics 2020-03-13 He Li , Menglin Huang , Shiyou Chen

Band gap engineering of oxide semiconductors through doping is critical for photocatalysis and optoelectronics, yet the combinatorial space of dopant elements, substitution sites, and co-doping combinations far exceeds typical density…

Materials Science · Physics 2026-04-14 Abhinaba Basu

In this work, doping-defect interactions relevant to self-compensation in p-type GaN were investigated using atom probe tomography. The 3D visualization of ion distribution revealed the formation of spherical Mg-rich clusters and the…

The contribution of $O^{2-}$ ions to antiferromagnetism in $La_{2-x}Ae_xCuO_4$ ($Ae = Sr, Ba)$ is highly sensitive to doped holes. In contrast, the contribution of $Cu^{2+}$ ions to antiferromagnetism in $Nd_{2-x}Ce_xCuO_{4+y}$ is much less…

General Physics · Physics 2017-02-20 Manfred Bucher

In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…

Materials Science · Physics 2019-03-27 Fernando P. Sabino , Su-Huai Wei , Anderson Janotti

Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly…

Materials Science · Physics 2021-07-21 Lucia Iglesias , Manuel Bibes , Julien Varignon

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with…

Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly…

Materials Science · Physics 2016-03-01 Nasrin Sarmadian , Rolando Saniz , Bart Partoens , Dirk Lamoen

The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples…

Materials Science · Physics 2015-06-11 R. Karmakar , S. K. Neogi , Aritra Banerjee , S. Bandyopadhyay

Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional…

Materials Science · Physics 2014-07-02 Vladan Stevanovic , Andriy Zakutayev , Stephan Lany

We have applied the many-body ab-initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure, and the energetics of the oxygen vacancy, zinc interstitial and hydrogen impurities in ZnO. We show that DMC is…

Materials Science · Physics 2015-05-01 Juan A. Santana , Jaron T. Krogel , Jeongnim Kim , Paul R. C. Kent , Fernando A. Reboredo

Using angle-resolved photoemission spectroscopy, we studied the electronic structure of NaFe$_{1-x}$Co$_x$As from an optimally doped superconducting compound ($x=0.028$) to a heavily overdoped non-superconducting one ($x=0.109$). Similar to…

Superconductivity · Physics 2012-06-21 S. T. Cui , S. Y. Zhu , A. F. Wang , S. Kong , S. L. Ju , X. G. Luo , X. H. Chen , G. B. Zhang , Z. Sun

Hexagonal diamond (HD), an exotic carbon allotrope recently synthesized in bulk form, exhibits superior mechanical properties compared to cubic diamond (CD) and holds promise for advanced industrial and quantum applications. Using…

Materials Science · Physics 2026-05-18 Ling Zhu , Xuanxuan Zhang , Guliqinayi Alimu , Chen-Min Dai , Chunlan Ma , Zenghua Cai

In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation…

Strongly Correlated Electrons · Physics 2009-11-07 Y. Fagot-Revurat , D. Malterre , F. X. Lannuzel , E. Janod , C. Payen , L. Gavioli , F. Bertran

Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation…