Related papers: Spin-Transfer-Torque Driven Magneto-Logic OR, AND …
Memristors are low-power memory-holding resistors thought to be useful for neuromophic computing, which can compute via spike-interactions mediated through the device's short-term memory. Using interacting spikes, it is possible to build an…
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
We present a simple and fast method to simulate spin-torque driven magnetisation dynamics in nano-pillar spin-valve structures. The approach is based on the coupling between a spin transport code based on random matrix theory and a…
Nanomagnetic logic transmits information along a path of nanomagnets. The basic mechanism to drive such a transmission, known as clocking, can be achieved by exploiting the spin-Hall effect, as recently observed in experiments on…
To bring Spin Wave (SW) based computing paradigm into practice and develop ultra low power Magnonic circuits and computation platforms, one needs basic logic gates that operate and can be cascaded within the SW domain without requiring back…
Logic gates are an indispensable part of digital circuits, and therefore such devices with fast operating speeds and simple designs are vital for all kinds of electronic applications. This paper proposes simple Y-shaped designs of…
Today, almost all information processing is performed using electronic logic circuits operating with up to several gigahertz frequency. All-optical logic, however, that holds the promise to allow up to three orders of magnitude higher speed…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
We propose a new experimentally corroborated paradigm in which the functionality of the brain's logic-gates depends on the history of their activity, e.g. an OR-gate that turns into a XOR-gate over time. Our results are based on an…
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets…
The recently proposed probabilistic spin logic presents promising solutions to novel computing applications. Multiple cases of implementations, including invertible logic gate, have been studied numerically by simulations. Here we report an…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory and logic applications. Recently, orbital currents -- transverse orbital angular momentum flow in…