Related papers: Spin-Transfer-Torque Driven Magneto-Logic OR, AND …
We study sequential tunneling of magnetic excitations in nonitinerant systems (either magnons or spinons) through triangular molecular magnets. It is known that the quantum state of such molecular magnets can be controlled by application of…
This article discusses the spin-torque effect in a spin-valve made out of two ferromagnetic leads connected through a coherent nanoconductor (NC), in the limit where a single channel of the NC lies near the Fermi energy of the leads. Due to…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We propose and develop a concept of magnonic logic gates enabling reversible computing. The gates consist of passive elements: waveguides, cross-junctions and phase shifters. Logical 0 and 1 are encoded in the relative phase of the…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and…
Topological edge states are an attractive starting point for post-CMOS device concepts, but turning them into elementary logic still requires simple architectures with a clear physical mechanism. Here we investigate binary logic in…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Magnonic logic gates represent a crucial step toward realizing fully magnonic data processing systems without reliance on conventional electronic or photonic elements. Recently, a universal and reconfigurable inverse-design device has been…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
The switching time of a magnet in a spin current based majority gate depends on the input vector combination, and this often restricts the speed of majority-based circuits. To address this issue, this work proposes a novel two-phase scheme…
An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting…
Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on…
We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
The switching dynamics of a multiferroic nanomagnetic NAND gate with fan-in/fan-out is simulated by solving the Landau-Lifshitz-Gilbert (LLG) equation while neglecting thermal fluctuation effects. The gate and logic wires are implemented…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…