Related papers: Spin-Transfer-Torque Driven Magneto-Logic OR, AND …
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin…
A reconfigurable logic gate is proposed in a two-dimensional double quantum wire system with a coupling window enabled by a Rashba field. Manipulating the spin states of incoming electrons several quantum logic gates (OR, AND, XOR, CNOT)…
We proposed a scheme to realize a controlled-NOT quantum logic gate in a dimer of exchange coupled single-molecule magnets, $[\textrm{Mn}_4]_2$. We chosen the ground state and the three low-lying excited states of a dimer in a finite…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
We simulate the stochastic Landau-Lifshitz-Gilbert (LLG) dynamics of a uniaxial nanomagnet out to sub-millisecond timescales using a graphical processing unit based micromagnetic code and determine the effect of geometrical tilts between…
Nanomagnets with biaxial magnetocrystalline anisotropy have four stable magnetization orientations that can encode 4-state logic bits (00), (01), (11) and (10). Recently, a 4-state NOR gate derived from three such nanomagnets, interacting…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
We propose to use oscillating spin currents with slowly varying frequency (chirp) to manipulate and control the magnetization dynamics in a nanomagnet. By recasting the Landau-Lifshitz-Slonczewski equation in a quantum-like two-level…
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…
Magnetic skyrmions, which are topological particle-like excitations in ferromagnets, have attracted a lot of attention recently. Skyrmionics is an attempt to use magnetic skyrmions as information carriers in next generation spintronic…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
An array of spin torque oscillators (STOs) for practical applications such as pattern recognition was recently proposed, where several STOs are connected by a common nonmagnet. In this structure, in addition to the electric and/or magnetic…
We propose a new, low-complexity solution to realize multi-input-bit gates acting on exponentially large superpositions in noise-based logic processors. Two examples are shown, the NOT gate and the CNOT gate. The operations can be executed…
Recent advancements in the realizations of superconducting diodes have pushed the diode coefficient $\eta$ towards its theoretical maximum of $\eta=1$. In this work, we describe the construction of logic gates NOT, AND, OR, NAND and NOR…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
We have investigated the realizability of the controlled-NOT (CNOT) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the…
We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of…
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180{\deg} domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…