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Related papers: Magnetic quantum ratchet effect in Si-MOSFETs

200 papers

We study the effect of the magnetic field orientation on the electroabsorption spectra of excitons confined in extremely shallow quantum wells. When the applied electric field is parallel to the quantum well plane, we demonstrate that, for…

Condensed Matter · Physics 2007-05-23 A. Getter , I. E. Perakis

We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction…

Materials Science · Physics 2009-11-10 M. Covington , M. AlHajDarwish , Y. Ding , N. J. Gokemeijer , M. A. Seigler

We show in simulations that overdamped interacting particles in two dimensions with a randomly disordered substrate can exhibit novel nonequilibrium transport phenomena including a transverse ratchet effect, where a combined dc drive and…

Superconductivity · Physics 2009-11-11 C. Reichhardt , C. J. Olson Reichhardt

We study stationary electron flow through a three-terminal quantum ring and describe effects due to deflection of electron trajectories by classical magnetic forces. We demonstrate that generally at high magnetic field ($B$) the current is…

Mesoscale and Nanoscale Physics · Physics 2010-05-10 M. R. Poniedzialek , B. Szafran

The time-dependent non-crossing approximation is used to study the transient current in a single electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric…

Strongly Correlated Electrons · Physics 2015-05-13 A. Goker , B. A. Friedman , P. Nordlander

The Hall effect usually occurs when the Lorentz force acts on a charge current in a conductor in the presence of perpendicular magnetic field. On the other hand, neutral quasi-particles such as phonons and spins can carry heat current and…

Materials Science · Physics 2010-08-12 Y. Onose , T. Ideue , H. Katsura , Y. Shiomi , N. Nagaosa , Y. Tokura

We discuss the effects caused by a resonant cavity around a sample of a magnetic molecular crystal (such as Mn${}_{12}$-Ac), when a time dependent external magnetic field is applied parallel to the easy axis of the crystal. We show that the…

Quantum Physics · Physics 2007-05-23 Mihaly G. Benedict , Peter Foldi , F. M. Peeters

We consider the electron transport in single molecule magnet transistors in the presence of Zeeman spin splitting and magnetic quantum coherence (MQC). The Zeeman interaction is extended along the leads, thereby producing gaps in the energy…

Mesoscale and Nanoscale Physics · Physics 2014-07-02 Gabriel Gonzalez , Michael N. Leuenberger

This paper compares the transient induced current due to the electromagnetic shock produced by a charged particle impacting a perfectly conducting plate, with the classical, quasi-static induced current of Ramo and Shockley (RS). We…

Plasma Physics · Physics 2022-10-12 D. Li , P. Wong , D. Chernin , Y. Y. Lau

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

The thermodynamics of irreversible processes in continuous media predicts the existence of a Magnetic Nernst effect that results from a magnetic analog to the Seebeck effect in a ferromagnet and magnetophoresis occurring in a paramagnetic…

Mesoscale and Nanoscale Physics · Physics 2016-01-20 Sylvain D. Brechet , Jean-Philippe Ansermet

We propose that a high-quality flat interface or boundary can serve as a long-range skew scatterer for charged quasiparticles in a metal. When an electric current flows parallel to the interface, the balance between clockwise and…

Mesoscale and Nanoscale Physics · Physics 2025-03-18 J. Voss , I. A. Ado , M. Titov

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam…

A wire that conducts an electric current will give rise to circular magnetic field (the \O{}rsted magnetic field), which can be calculated using the Maxwell-Ampere equation. For wires with diameters in the macroscopic scale, the…

Mesoscale and Nanoscale Physics · Physics 2021-09-21 Sherif Abdulkader Tawfik

Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…

Materials Science · Physics 2010-02-02 Ryosho. Nakane , Tomoyuki Harada , Kuniaki Sugiura , Satoshi Sugahara , Masaaki Tanaka

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…

Strongly Correlated Electrons · Physics 2007-05-23 H. Kempa , P. Esquinazi

We derive the current response to the linearly polarized electromagnetic field with finite frequency and wave vector incident normally on the specular surface of a clean nonconventional superconductor with orbital spontaneous magnetization…

Superconductivity · Physics 2009-11-13 V. P. Mineev

We study two capacitively coupled double quantum dots focusing on the regime in which one double dot is strongly biased, while no voltage is applied to the other. Then the latter experiences an effective driving force which induces a…

Mesoscale and Nanoscale Physics · Physics 2012-09-28 Robert Hussein , Sigmund Kohler

Superconducting magnetoelectric effect, which is the current-induced magnetization in a superconductor, mainly focused on the spin magnetization in previous studies, but ignore the effect of the orbital magnetic moments carried by the…

Mesoscale and Nanoscale Physics · Physics 2021-07-14 Wen-Yu He , K. T. Law

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…

Other Condensed Matter · Physics 2026-03-24 Juan P. Mendez , Coleman Cariker , Michael Titze , Alex A. Belianinov , Denis Mamaluy