Related papers: Spin-memory effect and negative magnetoresistance …
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability…
In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an…
We present a theory of organic magnetoresistance (OMR) based on the quenching of the quantum correlation between the carrier's spin and its local environment when the incoherent hopping takes place. We prove that this process contributes a…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found…
We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under…
We derive the kinetic equations for polaron hopping in organics that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide…
We theoretically investigate inelastic transport through anisotropic magnetic molecules weakly coupled to one ferromagnetic and one nonmagnetic lead. We find that the current is suppressed over wide voltage ranges due to spin blockade. In…
We show that the tunnel coupling between semiclassical states localized in different minima of a smooth random potential increases when magnetic field is applied. This increase originates from the difference in gauge factors which electron…
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
We consider the effect of electron-electron interaction on the density of states of disordered paramagnetic conductor in the presence of spin accumulation and magnetic field. We show that interaction correction to electron density of states…
Negative magnetoresistivity is a special magnetotransport property associated with chiral anomaly in four dimensional chiral anomalous systems, which refers to the transport behavior that the DC longitudinal magnetoresistivity decreases…
Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with…
A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two…