Related papers: Large enhancement in the generation efficiency of …
Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical…
Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a…
Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
Here we explore the applicability of the two current model in understanding the transport behavior of Fe 2 CoSi compound by using the first principles calculations in combination with the Boltzmann transport theory. The spin-unpolarized…
Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Recently, Heusler alloys-based spin gapless semiconductors (SGSs) with high Curie temperature (TC) and sizeable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive…
We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $\langle$110$\rangle$, which is a conventional cleavage direction,…
We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe…
Recent experiments have demonstrated efficient spin transfer across layers in the van der Waals heterostructure composed of WTe2 and Fe3GeTe2, signaling a potential breakthrough in developing all-van der Waals spin-orbit torque devices.…
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…
Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing…
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch…
The generation of pure spin current, spin angular momentum transport without charge flow, is crucial for developing energy-efficient spintronic devices with minimal Joule heating. Here, we introduce the intrinsic nonlinear pure spin Hall…
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection.…
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…