Related papers: Large enhancement in the generation efficiency of …
Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic…
We studied metastable $\alpha$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is…
Magnon based spintronic devices require the modulation of magnon spin transport for their operations. We provide a proof-of-principle of an unconventional two-terminal non-local magnon transport device where the same contact is…
The generation of short spin-current pulses is essential for fast spintronic devices. So far, spin current pulses are generated by femtosecond laser pulses which drive spins from a ferromagnetic metal layer. However, the need for…
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8~nm) HgTe quantum well,…
Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and studied actively. For example, representative methods of spin current generation include…
We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel…
Pure spin current is a powerful tool for manipulating spintronic devices, and its dynamical behavior is an important issue. By using mesoscopic transport theory for electron tunneling induced by spin accumulation, we investigate the…
Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in…
Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7…
Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction.…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
We report on efficient spin current generation at room temperature in rutile type WO$_{2}$ grown on Al$_{2}$O$_{3}$(0001) substrate. The optimal WO$_{2}$ film has (010)-oriented monoclinically distorted rutile structure with metallic…
The dynamic magnetic properties of Full Heusler alloy thin films of Co$_2$FeGe, grown on MgO (001) substrates under different thermal conditions, were investigated. Brillouin light scattering and ferromagnetic resonance measurements…