Related papers: A new route to spin-orbit torque engineering via o…
Controlling/storing information carriers, such as electron charge and spin, is key for modern information society, and significant efforts have been paid made to establish novel technologies at the nanoscale. The rise of Si-based…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the…
The origin of spin-orbit torques generated from the conversion of charge-to-spin currents is of considerable debate. Solid understanding of the physics behind is key to the development of current and voltage controlled switching dynamics in…
The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of…
Contrary to conventional wisdom that spin dynamics induced by current are exclusive to metallic magnets, we theoretically predict that such phenomena can also be realized in magnetic insulators, specifically in the magnetoelectric…
Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However,…
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…
Efficiently manipulating the magnetization of van der Waals ferromagnets has attracted considerable interest in developing room-temperature two-dimensional material-based memory and logic devices. Here, taking advantage of the unique…
We propose a mechanism of intrinsic spin Hall effect (SHE). In this mechanism, local orbital angular momentum (OAM) induces electron position shift and couples with the bias electric field to generate orbital Hall effect (OHE). SHE then…
We demonstrate a high-quality spin orbit torque nano-oscillator comprised of spin wave modes confined by the magnetic field by the strongly inhomogeneous dipole field of a nearby micromagnet. This approach enables variable spatial…
The field of magnonics, which utilizes propagating spin waves for nano-scale transmission and processing of information, has been significantly advanced by the advent of the spin-orbit torque. The latter phenomenon can allow one to overcome…