Related papers: Tunneling in Nanoscale Devices
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…
Experimentally observed magnetic fields with nanoscale variations are theoretically modeled by a piece-wise constant function with jump discontinuity along a smooth curve, the magnetic edge. Assuming the edge is a closed curve with an axis…
We consider tunneling of vortices across a superconducting film that is both narrow and short (and connected to bulk superconducting leads at the ends). We find that in the superconducting state the resistance, at low values of the…
We consider tunneling to the continuum in a multi-dimensional potential. It is demonstrate that this problem can be treated as two separate problems: a) a bound state and b) a non-resonance scattering problem, by a proper splitting of the…
Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…
We analyze and clarify the transport properties of a one-dimensional metallic nanoparticle array with interaction between charges restricted to charges placed in the same conductor. We study the threshold voltage, the I-V curves and the…
Quasi-one-dimensional superconductors or nanowires exhibit a transition into a nonsuperconducting regime, as their diameter shrinks. We present measurements on ultrashort nanowires (~40-190 nm long) in the vicinity of this quantum…
We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only…
A simple model is considered to study the effects of finite size and internal structure in the tunneling of bound two-body systems through a potential barrier. It is demonstrated that these effects are able to increase the tunneling…
We calculate the electrical conductivity of a thin crystalline strip of atoms confined within a quasi one dimensional channel of fixed width. The conductivity shows anomalous behavior as the strip is deformed under tensile loading. Beyond a…
A theoretical approach for the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. It consists in a resummation of the dominant Feynman diagrams…
Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The…
Ion transport measurements are widely used as an indirect probe for various properties of confined electrolytes. It is generally assumed that the ion concentration in a nanoscale channel is equal to the ion concentration in the macroscopic…
Theoretical foundations of the problem of quantum spin tunneling in magnetic nanostructures are presented. Several model problems are considered in detail, including recent new results on tunneling in antiferromagnetic nanoparticles and…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
Unique electronic properties of self-organized Au atom chains on Ge(001) in novel c(8x2) long-range order are revealed by scanning tunneling microscopy. Along the nanowires an exceptionally narrow conduction path exists which is virtually…
We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them.…
The electron transport in a 1D conductor with an isolated local defect such as an impurity or a non-adiabatic contact is studied theoretically. New regime of conduction in correlated 1D systems is predicted beyond the well-known regime of…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
We present a theoretical study of the electronic transport through Pt nanocontacts. We show that the analysis of the tunnelling regime requires a very careful treatment of the technical details. For instance, an insufficient size of the…