Related papers: Tunneling in Nanoscale Devices
Quantum tunneling is considered from the point of view of local realism. It is concluded that a quantum object tunneling through a potential barrier cannot be interpreted as a point-like particle because such an interpretation generates a…
Using an atomic force microscope we have created nanotube junctions such as buckles and crossings within individual single-wall metallic carbon nanotubes connected to metallic electrodes. The electronic transport properties of these…
Various aspects of time-dependent processes are studied within the large N approximation of O(N) vector models in three dimensions. These include the rolling of fields, the tunneling and decay of vacua. We present an exact solution for the…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
The conducting and mechanical properties of a metallic nanowire formed at the junction between two macroscopic metallic electrodes are investigated. Both two- and three-dimensional wires with a W(ide)-N(arrow)-W(ide) geometry are modelled…
In these lecture notes we will consider systems in which the motion of electrons is confined to one dimension (1D). In these so-called quantum wires electron-electron interaction effects play an important role because the restricted…
Transport of electrons through two-dimensional semiconductor structures on the nanoscale in the presence of perpendicular magnetic field depends on the interplay of geometry of the system, the leads, and the magnetic length. We use a…
A 2D tunneling network consisting of nanoclusters placed on a surface is studied. It is shown that such a network is capable of transferring large supercurrent at high temperatures. For a realistic set of parameters the damping is quite…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties…
A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…
Quantum tunneling is a fundamental quantum mechanical effect involved in plenty of physical phenomena. Its control would impact these phenomena and the technologies based on them. We show that the quantum tunneling probability through a…
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent…
Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A…
Colloidal nanocrystal quantum dots (QD) enable the bottom-up assembly of designer solids. Among the multitudinous applications of QD solids, there has been great success in exploiting the tunable optical properties for LED displays,…
The transmittance of intersection between narrow quantum strips is studied. It is assumed that strip widths are less than the electron wavelength, so that they are tunnel conductors. In this assumption the Schr\"odinger equation is reduced…
Effects of the electron-electron interaction on tunneling in a semiconductor nanowhisker are studied in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. In bulk states, the temperature dependence of…
Transport through correlated nanoscale systems underpins the operation of quantum-dot and molecular-scale devices, yet accurate simulations of large open quantum systems remain computationally challenging as system size increases.…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…