Related papers: Tunneling in Nanoscale Devices
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
We consider a class of systems where, due to the large mismatch of dielectric constants, the Coulomb interaction is approximately one-dimensional. Examples include ion channels in lipid membranes and water filled nanopores in silicon or…
Quantum tunneling is a quantum phenomenon in which a microscopic object crosses through a potential barrier even if its energy cannot overcome the barrier. A general belief is that tunneling occurs only when the barrier width is comparable…
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of…
In the deformed quantum mechanics with a minimal length, one WKB connection formula through a turning point is derived. We then use it to calculate tunnelling rates through potential barriers under the WKB approximation. Finally, the…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…
We describe in this short review the influence of discrete symmetries in complex quantum dots on the Kondo co-tunneling through these nano-objects. These discrete symmetries stem from the geometrical structure of the tunneling devices (e.g…
In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…
Macroscopic assemblies of one- and two-dimensional materials promise to translate nanoscale electronic properties into device-scale performance, yet the microscopic principles governing charge transport in such networks remain unresolved.…
We explore the prospects to control by use of time-dependent fields quantum transport phenomena in nanoscale systems. In particular, we study for driven conductors the electron current and its noise properties. We review recent…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We present a microscopic approach to the quantum tunneling of vortices. The formalism characterizes the rate at which a many-body superconducting state with a vortex in one location makes a transition to a second many-body superconducting…
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…