Related papers: Spin-dependent phenomena and device concepts explo…
We determine theoretically the effect of spin-orbit coupling on the magnetic excitation spectrum of itinerant multi-orbital systems, with specific application to iron-based superconductors. Our microscopic model includes a realistic…
First principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the…
Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive…
The fluid theory of plasmas is extended to include the properties of electron spin. The linear theory of waves in a magnetized plasma is presented, and it is shown that the spin effects causes a change of the magnetic permeability.…
Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many…
We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the…
The Rashba spin-orbit coupling effect, primarily arising from structural-inversion asymmetry in periodic crystals, has garnered considerable attention due to its tunability and potential applications in spintronics. Its capability to…
Superposition and entanglement are uniquely quantum phenomena. Superposition incorporates a phase which contains information surpassing any classical mixture. Entanglement offers correlations between measurements in quantum systems that are…
The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the…
A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on…
Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of…
We present a review of recent advances in the study of many-body effects in magnetic nanoparticles. Considering classical spins on a lattice coupled by the exchange interaction in the presence of the bulk and surface anisotropy, we…
The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs…
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs…
Spectroscopic measurements with low-temperature scanning tunneling microscopes have been used very successfully for studying not only individual atomic or molecular spins on surfaces but also complexly designed coupled systems. The symmetry…
Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the…
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method…