Related papers: Effects of interface electric field on the magneto…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…
We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $\rho_{xx}$ and $\rho_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal…
The exchange interaction between the conduction electrons and magnetic moments at magnetic interface leads to mutual conversion between electron spin current and magnon current. We introduce a concept of spin convertance which…
The recently-proposed coupling between the angular momentum density and magnetic moment [A. Raeliarijaona et al, Phys. Rev. Lett. 110, 137205 (2013)] is shown here to result in the prediction of (i) novel spin currents generated by an…
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
The interface structure of Fe/MgO(100) magnetic tunnel junctions predicted by density functional theory (DFT) depends significantly on the choice of exchange and correlation functional. Bader analysis reveals that structures obtained by…
We study the zero-bias magnetoresistance MR of an interacting quantum dot connected to two ferromagnetic leads and capacitively coupled to a gate voltage source Vg. We investigate the effects of the spin-activity of the contacts between the…
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation…
Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a…