Related papers: Current Dependence of Spin Torque Switching Barrie…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
The co-tunneling current through a two-level doubly occupied quantum dot weakly coupled to ferromagnetic leads is calculated in the Coulomb blockade regime. It is shown that the dependence of the differrential conductance on applied voltage…
We describe time-domain measurements which provide new information about the large-angle nonlinear dynamics of nanomagnets excited by spin-transfer torque from a spin-polarized current. Sampling-oscilloscope measurements, which average over…
Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve…
We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…
We study how a bias voltage changes magnetic exchange interactions. We derive a general expression for magnetic exchange interactions for systems coupled to reservoirs under a bias potential, and apply it to spin valves. We find that for…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
Synchronization and chaos caused by alternating current and microwave field in a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized reference layer is comprehensively studied…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance…
We present a theoretical study of the influence of magnetic viscosity on current-driven domain wall dynamics. In particular we examine how domain wall depinning transitions, driven by thermal activation, are influenced by the adiabatic and…
We calculate the magnetic-field dependence of the critical current due to both geometrical edge barriers and bulk pinning in a periodic coplanar array of narrow superconducting strips. We find that in zero or low applied magnetic fields the…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…
We report quantum and semi-classical calculations of spin current and spin-transfer torque in a free-electron Stoner model for systems where the magnetization varies continuously in one dimension.Analytic results are obtained for an…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…