Related papers: Current Dependence of Spin Torque Switching Barrie…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
In metallic ferromagnets, an electric current is accompanied by a flux of angula r momentum, also called spin current. In multilayers, spatial variations of the spin current correspond to drive torques exerted on a magnetic layer. These…
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…
Large heat currents are obtained in Co/Cu/Co spin valves positioned at the middle of Cu nanowires. The second harmonic voltage response to an applied current is used to investigate the effect of the heat current on the switching of the spin…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctions has been studied at low temperature as a function of free-layer thickness. The phase diagram for current-induced magnetic excitations has been determined for…
A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the…
The time-dependent scaling of the thermoremanent and zero-field-cooled susceptiblities in ferromagnetic spin systems undergoing ageing after a quench to a temperature at or below criticality is studied. A recent debate on their…
We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F (F-ferromagnet; I-insulator; N-normal-metal) multilayers of nanoscale thickness attached to two normal metal…
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…
The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted…
Current induced switching in Co/Cu/Co trilayers is described in terms of ab-initio determined magnetic twisting energies and corresponding sheet resistances. In viewing the twisting energy as an energy flux the characteristic time thereof…
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to…
The spin-transfer torque from a DC spin-polarized current can generate highly-coherent magnetic precession in nanoscale magnetic-multilayer devices. By measuring linewidths of spectra from the resulting resistance oscillations, we argue…
We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…
We report the observation of enhanced spin dependent shot noise in magnetic tunnel barriers, suggesting transport through localized states within the barrier. This is supported by the existence of negative magnetoresistance and structure in…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
Several recent experimental studies have confirmed the possibility of switching the magnetization direction in the small magnetic domains by pumping large spin-polarized currents through them. On the basis of equations proposed by…