Related papers: Current Dependence of Spin Torque Switching Barrie…
We study the bias-dependent spin-transfer torque in magnetic tunnel junctions in the Stoner model by scattering theory. We show that the in-plane (Slonczewski type) torque vanishes and subsequently reverses its direction when the bias…
Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching,…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
A theoretical formula is derived for the threshold current to switch a perpendicular magnetization in a ferromagnet by the spin Hall effect. The numerical simulation of the Landau-Lifshitz-Gilbert equation indicates that magnetization…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a…
The stability is analyzed of the equilibrium configurations of a magnetic junction with a free layer that has cubic symmetry and two anisotropy axes in the layer plane. Different variants of the switching between various configurations are…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…