Related papers: Controlling electron propagation on a topological …
Band-topology is traditionally analyzed in terms of gauge-invariant observables associated with crystalline Bloch wavefunctions. Recent work has demonstrated that many of the free fermion topological characteristics survive even in an…
Investigating the interaction of electron beams with materials and light has been a field of research since more than a century. The field was advanced theoretically by the raise of quantum mechanics and technically by the introduction of…
Topological insulators exhibit gapless edge or surface states that are topologically protected by time-reversal symmetry. However, several promising candidates for topologically insulating materials (such as Bi$_2$Se$_3$ and HgTe) contain…
Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the…
We investigate electron interferometry of edge states in Topological Insulators. We show that, when inter-boundary coupling is induced at two quantum point contacts of a four terminal setup, both Fabry-P\'erot-like and Aharonov-Bohm-like…
The surfaces of intrinsic magnetic topological insulators (TIs) host magnetic moments exchange-coupled to Dirac electrons. We study the magnetic phases arising from tuning the electron density using variational and exact diagonalization…
We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…
We formulate and apply a theory of electron-phonon interactions for the surface state of a strong topological insulator. Phonons are modelled using an isotropic elastic continuum theory with stress-free boundary conditions and interact with…
Topological insulators (TIs) are quantum materials combining insulating bulk properties with conductive surface states protected by time-reversal symmetry. Their unique electromagnetic behavior originates from the topological…
Coupling of the spin and orbital degrees of freedom on the surface of a strong three-dimensional insulator, on the one hand, and textured magnetic configuration in an adjacent ferromagnetic film, on the other, is studied using a combination…
Time-periodic perturbations can be used to engineer topological properties of matter by altering the Floquet band structure. This is demonstrated for a spin Hall insulator in the presence of monochromatic circularly polarized light. The…
Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between…
Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a…
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…
Topology is quickly becoming a cornerstone in our understanding of electronic systems. Like their electronic counterparts, bosonic systems can exhibit a topological band structure, but in real materials it is difficult to ascertain their…
The low-energy band-structure of electrons propagating on a lateral surface of a heterostructure consisting of three dimensional topological insulator (TI) and magnetic insulator layers has been calculated. The energy spectrum is highly…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
We investigate effects of strong correlation on the surface state of topological insulator (TI). We argue that electrons in the regime of crossover from weak anti-localization to weak localization, are strongly correlated and calculate…
Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust…
The surface of a 3D topological insulator is described by a helical electron state with the electron's spin and momentum locked together. We show that in the presence of ferromagnetic fluctuations the surface of a topological insulator is…