Related papers: STM contrast inversion of the Fe(110) surface
A scanning tunneling microscope can probe the inelastic spin excitations of a single magnetic atom in a surface via spin-flip assisted tunneling in which transport electrons exchange spin and energy with the atomic spin. If the inelastic…
We propose cotunneling as the microscopic mechanism that makes possible inelastic electron spectroscopy of magnetic atoms in surfaces for a wide range of systems, including single magnetic adatoms, molecules and molecular stacks. We…
The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This…
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67.…
We explore theoretically the scanning tunneling microscopy of single molecules on substrates using a framework of two local probes. This framework is appropriate for studying electron flow in tip/molecule/substrate systems where a thin…
The integration of scanning tunneling microscopy (STM) and electron spin resonance (ESR) spectroscopy has emerged as a powerful and innovative tool for discerning spin excitations and spin-spin interactions within atoms and molecules…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in…
The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively…
The surface states of three-dimensional topological insulators exhibit a helical spin texture with spin locked to momentum. To date, however, the direct all-electrical detection of the helical spin texture has remained elusive owing to the…
In a Scanning Tunneling Microscope (STM), when a tunneling electron treated as a point charge enters the barrier region between the tip and the sample, it induces image charges on the conducting surfaces, which modifies the shape of the…
We present a computational approach to simulate local contrast observed in Field Ion Microscopy (FIM). It is based on density-functional theory utilizing the Tersoff-Hamann approach as done in Scanning Tunneling Microscopy (STM). A key…
Understanding how local structural order governs electronic correlations is essential for revealing the microscopic mechanism underlying emergent behavior in two-dimensional magnets. In the layered van der Waals ferromagnet…
We study the bias-dependent spin-transfer torque in magnetic tunnel junctions in the Stoner model by scattering theory. We show that the in-plane (Slonczewski type) torque vanishes and subsequently reverses its direction when the bias…
The orbital angular moment of magnetic atoms adsorbed on surfaces is often quenched as a result of an anisotropic crystal field. Due to spin-orbit coupling, what remains of the orbital moment typically delineates the orientation of the…
Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe…
We present a theoretical study for the scanning tunneling microscopy (STM) spectra of surface-supported magnetic nanostructures, incorporating strong correlation effects. As concrete examples, we study Co and Mn adatoms on the Cu(111)…
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to…
Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems…