Related papers: $g$-factor anisotropy in nanowire-based InAs quant…
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them…
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…
Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the F lead is detected through the splitting of the spin-1/2…
We utilize classical molecular dynamics to study the the quality (Q)-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from…
The $g$-factor and static quadrupole moment for the wobbling mode in the nuclide $^{133}$La are investigated as functions of the spin $I$by employing the particle rotor model. The model can reproduce the available experimental data of…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
The structure of the electron quantum size levels in spherical nanocrystals is studied in the framework of an eight--band effective mass model at zero and weak magnetic fields. The effect of the nanocrystal surface is modeled through the…
We report the direct observation of multiple `spin zeroes' in angle-dependent magnetic quantum oscillations measured up to 85T in YBa2Cu3O6+x, at which the amplitude falls to a deep minimum accompanied by a phase inversion of the measured…
We consider the $g$ factor of a spin-1/2 particle (electron or muon) bound by an arbitrary central field. We present an approach which allows one to express the relativistic $g$ factor in terms of the binding energy. We derive the general…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
The two-loop self-energy correction to the bound-electron $g$-factor in hydrogenlike ions is investigated, taking into account the electron-nucleus interaction exactly. This all-order calculation is required to improve the total theoretical…
We investigate the effective Lande factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the $\mathbf{k}\cdot\mathbf{p}$ theory and the envelope function approach we derive a conduction band Hamiltonian where the…
The spin properties of charge carriers confined in CuCl semiconductor nanocrystals (NCs) of different sizes (radius from 1.8 nm up to 28 nm) crystallized in a glass matrix are studied experimentally and theoretically. By means of…
We develop in this letter an analytical approach using form- factors to compute time dependent correlations in integrable quantum impurity problems. As an example, we obtain for the first time the frequency dependent conductivity…
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor…
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in…
We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor…
The Land\'e or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in…
Fully relativistic approach is applied to evaluation of the nuclear recoil effect on the bound-electron $g$ factor in hydrogenlike ions to first order in the electron-to-nucleus mass ratio $m/M$ and to all orders in $\alpha Z$. The…
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the…