Effective g factor of 2D holes in strained Ge quantum wells

I. L. Drichko; A. A. Dmitriev; V. A. Malysh; I. Yu. Smirnov; H. von Känel; M. Kummer; D. Chrastina; G. Isella

doi:10.1063/1.5025413

Effective g factor of 2D holes in strained Ge quantum wells

Mesoscale and Nanoscale Physics 2018-05-09 v1

Authors: I. L. Drichko , A. A. Dmitriev , V. A. Malysh , I. Yu. Smirnov , H. von Känel , M. Kummer , D. Chrastina , G. Isella

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Abstract

The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$ ~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $\mathrm{g}_{\perp}$ -factor of each sample was determined. The $\mathrm{g}_{\perp}$ -factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band.

Keywords

effective g-factor 2d holes strained ge quantum wells valence band non-parabolicity ac conductivity hole density

Cite

@article{arxiv.1804.03876,
  title  = {Effective g factor of 2D holes in strained Ge quantum wells},
  author = {I. L. Drichko and A. A. Dmitriev and V. A. Malysh and I. Yu. Smirnov and H. von Känel and M. Kummer and D. Chrastina and G. Isella},
  journal= {arXiv preprint arXiv:1804.03876},
  year   = {2018}
}

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4 pages, 5 figures

Effective g factor of 2D holes in strained Ge quantum wells

Abstract

Keywords

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