Related papers: Thin films MnGe grown on Si(111)
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes…
Atomically thin transition metal dichalcogenide films with distorted trigonal (1T$^\prime$) phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T$^\prime$ film and experimental investigation of its…
Among the magnetostrictive alloys the one formed of iron and gallium (called "Galfenol" from its U.S. Office of Naval Research discoverers in the late 90's) is attractive for its low hysteresis, good tensile stress, good machinability and…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
We investigate the crystal structure, transport and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fex)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…
Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of…
In this paper we report the results about the synthesis and characterization of optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3 (100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm. The effect of substrate…
We report the bulk sensitive Hard X-ray (hv=5.95keV) core level photoemission spectroscopy to investigate the intrinsic electronic structure of strained (La0.85Ba0.15)MnO3 thin films. In a 20nm thick well-strained film with strongly…
The rapid advancement of digital technologies necessitates significant progress in functional materials, which are often derived from scarce elements and involve complex manufacturing processes. Additionally, the trend towards…
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for…
NbRe, a non-centrosymmetric superconductor with a transition temperature $T_\mathrm{c}$ up to 9\,K, attracts interest for its strong antisymmetric spin-orbit coupling and suitability for single-photon detection. While bulk and thin-film…
AB$_2$O$_4$ normal spinels with a magnetic B site can host a variety of magnetic and orbital frustrations leading to spin-liquid phases and field-induced phase transitions. Here we report the first epitaxial growth of (111)-oriented…
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…
We report on the preparation of thin films and multilayers of the intermetallic Heusler compound CuMnAl, Co2MnSn, Co2MnSi and Co2MnGe by rf-sputtering on MgO and Al2O3 substrates. Cu2MnAl can be grown epitaxially with (100)-orientation on…
Rare earth compounds display diverse electronic, magnetic, and magneto-transport properties. Recently these compounds of the type RAlGe (R = La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior. In this work, we have…
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on…
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron…
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum…