Related papers: Quantum Hall Effects in Monolayer-Bilayer Graphene…
Superlattices (SLs) in monolayer and bilayer graphene, formed by spatially periodic potential variations, lead to a modified bandstructure with extra finite-energy and zero-energy Dirac fermions with tunable anisotropic velocities. We…
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes…
The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional (2D) electron system in a magnetic field. In three dimensions (3D), the QHE is forbidden because the third dimension spreads Landau levels…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
The quantum anomalous Hall (QAH) effect, a condensed matter analog of the parity anomaly, is characterized by a quantized Hall conductivity in the absence of an external magnetic field. However, it has been recently shown that, even in the…
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes…
Fractional Quantum Hall effect (FQHE) is a unique many-body phenomenon, which was discovered in a two-dimensional electron system placed in a strong perpendicular magnetic field. It is entirely due to the electron-electron interactions…
We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$\Omega\mu$m$^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau…
Remarkable recent experiments on the moir\'e structure formed by pentalayer rhombohedral graphene aligned with a hexagonal Boron-Nitride substrate report the discovery of a zero field fractional quantum hall effect. These "(Fractional)…
We report on microscopic measurements of the low-energy electronic structures both at zigzag and armchair edges of bilayer graphene using scanning tunneling microscopy and spectroscopy (STM and STS). We have found that, both in the absence…
Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions…
We theoretically study the electronic band structure and the Hall effect in the negatively-curved three-dimensional (3D) graphene network in magnetic fields. We found that special energy regions appear above and below the zero-energy Landau…
Due to the lack of simulation tools that take into account the actual geometry of complicated quantum Hall samples there are lots of experiments that are not yet fully understood. Already some years ago R. G. Mani recorded a shift of the…
The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We…
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…