Related papers: Thickness-Dependent Interfacial Coulomb Scattering…
$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of…
A quantitative description of Coulomb interactions is developed for two-dimensional superconducting materials, enabling us to compare intrinsic with external screening effects, such as those due to substrates. Using the example of a doped…
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…
Atomically thin (two-dimensional, 2D) semiconductors have shown great potential as the fundamental building blocks for next-generation electronics. However, all the 2D semiconductors that have been experimentally made so far have…
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To…
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source…
An interplay between charge discreteness, coherent scattering and Coulomb interaction yields nontrivial effects in quantum transport. We derive a real time effective action and an equivalent quantum Langevin equation for an arbitrary…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…
When the excitation of carriers in real space is focused down to the nanometer scale, the carrier system can no longer be viewed as homogeneous and ultrafast transport of the excited carrier wave packets occurs. In state-of-the-art…
Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their…
Transport properties of narrow two-dimensional conducting wires in which the electron scattering is caused by side edges' roughness have been studied. The method for calculating dynamic characteristics of such conductors is proposed which…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…
We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the…