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We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI)…
We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We…
We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of NiMnSb in the scattering region. We investigate the dependence of the transmission function computed within the local spin density…
We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with…
The recent emergence of van der Waals (vdW) ferromagnets has opened new opportunities for designing spintronic devices. We theoretically investigate the coherent spin-dependent transport properties of the vdW ferromagnet Fe$_4$GeTe$_2$, by…
We demonstrate that due to their spin-orbit interaction carbon nanotube cross-junctions have attractive spin projective properties for transport. First, we show that the junction can be used as a versatile spin filter as a function of a…
The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and…
Utilizing ab initio simulations, we study the spin-dependent electronic transport characteristics within Fe$_4$GeTe$_2$-based van der Waals heterostructures. The electronic density of states for both free-standing and device-configured…
The electrical resistivities of Fe-Co alloys owing to random alloy disorder are calculated using the Kubo-Greenwood formula. The obtained electrical esistivities agree well with experimental data quantitatively at low temperature. The…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
In order to propose a ferromagnet exhibiting highly spin-polarized transport, we theoretically analyzed the spin polarization ratio of the conductivity of the bulk Fe$_4$N with a perovskite type structure, in which N is located at the body…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and…
CeBi has an intricate magnetic phase diagram whose fully-polarized state has recently been suggested as a Weyl semimetal, though the role of $f$ states in promoting strong interactions has remained elusive. Here we focus on the…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
Fe$M_2X_4$ spinels, where $M$ is a transition metal and $X$ is oxygen or sulfur, are candidate materials for spin filters, one of the key devices in spintronics. We present here a computational study of the inversion thermodynamics and the…