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Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport…

Mesoscale and Nanoscale Physics · Physics 2015-06-17 Jens Baringhaus , Frederik Edler , Christoph Neumann , Christoph Stampfer , Stiven Forti , Ulrich Starke , Christoph Tegenkamp

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG.…

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…

Materials Science · Physics 2009-11-13 J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad

Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on…

The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…

Materials Science · Physics 2024-02-23 Kun Cheng , Tianyi Tang , Wenkang Zhan , Zhenyu Sun , Bo Xu , Chao Zhao , Zhanguo Wang

Due to the predominantly surface character of graphene, it is highly suitable for functionalization with external atoms and/or molecules leading to a plethora of new and interesting phenomena. Here we show ferromagnetic properties of…

Materials Science · Physics 2015-06-15 A. J. M. Giesbers , K. Uhlířová , M. Konečný , E. C. Peters , M. Burghard , J. Aarts , C. F. J. Flipse

The controlled functionalization of graphene is critical for tuning and enhancing its properties, thereby expanding its potential applications. Covalent functionalization offers a deeper tuning of the geometric and electronic structure of…

Materials Science · Physics 2025-05-07 Ylea Vlamidis , Carmela Marinelli , Aldo Moscardini , Paolo Faraci , Stefan Heun , Stefano Veronesi

Graphene holds promises for exploring exotic superconductivity with Dirac-like fermions. Making graphene a superconductor at large scales is however a long-lasting challenge. A possible solution relies on epitaxially-grown graphene, using a…

We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator…

Optics · Physics 2022-04-08 David J. Moss

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…

Mesoscale and Nanoscale Physics · Physics 2021-10-12 Aniello Pelella , Alessandro Grillo , Enver Faella , Giuseppe Luongo , Mohammad Bagher Askari , Antonio Di Bartolomeo

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…

Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been…

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001)…

Mesoscale and Nanoscale Physics · Physics 2011-02-18 Nicola Ferralis , Roya Maboudian , Carlo Carraro

Motivated by the recent progress in analog computing [Science 343, 160 (2014)], a new approach to perform spatial integration is presented using a dielectric slab waveguide. Our approach is indeed based on the fact that the transmission…

Optics · Physics 2017-05-24 Farzad Zangeneh-Nejad , Amin Khavasi

A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…

Mesoscale and Nanoscale Physics · Physics 2013-07-17 Young I. Jhon , Myung S. Jhon

We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\deg}C in vacuum to create epitaxial multilayer graphene (MLG).…

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

Mesoscale and Nanoscale Physics · Physics 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems.…

We demonstrate the first successful functionalization of epitaxial three-dimensional graphene with metal nanoparticles. The functionalization is obtained by immersing the 3D graphene in a nanoparticle colloidal solution. This method is…

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