Related papers: High Frequency top-down Junction-less Silicon Nano…
Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate…
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…
In this study, InSb nanowires have been formed by electrodeposition and integrated into NW-FETs. NWs were formed in porous anodic alumina (PAA) templates, with the PAA pore diameter of approximately 100 nm defining the NW diameter.…
In Si nanowire (SiNW) solar cells enhanced light confinement property in addition to decoupling of charge carrier collection and light absorption directions plays a significant role to resolve the draw backs of bulk Si solar cells. In this…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
We report an actuation/detection scheme with a top-down nano-electromechanical system for frequency shift-based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for…
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface…
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths…
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…
We study nanoelectromechanical resonators fabricated from suspended flakes of NbSe$_2$ (thickness$\sim$30-50 nm) to probe charge density wave (CDW) physics at nanoscale. Variation of elastic and electronic properties accompanying the CDW…
By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
We present experimental and theoretical results on a new interferometer topology that nests a SU(2) interferometer, e.g., a Mach-Zehnder or Michelson interferometer, inside a SU(1,1) interferometer, i.e., a Mach-Zehnder interferometer with…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…