Related papers: SiGe quantum dots for fast hole spin Rabi oscillat…
Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally…
Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a…
The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin…
We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…
Recent theoretical and experimental results from quasi-one dimensional heavy hole systems have suggested that heavy hole gases have a strongly anisotropic g factor. In this theoretical paper, we propose a method for measuring this…
Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on…
Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive.…
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…
Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies…
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds…
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin…
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
The squeezing of a Ge planar quantum dot enhances the Rabi frequency of electric dipole spin resonance by several orders of magnitude due to a strong Direct Rashba spin-orbit interaction in such geometries (Bosco et al 2021 Phys. Rev. B 104…
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor…
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…