Related papers: Saturated Low-Temperature Conductivity in Ultrafas…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an…
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and…
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron…
Electrical conductivity (EC) is one of the important physical properties of minerals and rocks that can be used to characterize the composition and structure of the deep interior of the Earth.Theoretical studies have predicted that the…
Nodal-line superconductor NaAlSi with a transition temperature ($T_c$) of 7 K has attracted considerable attention in recent years, whereas its Ge counterpart, NaAlGe, does not superconduct down to the lowest temperature regardless of their…
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…
Recently, ultra-small-diameter Single Wall Nano Tubes with diameter of $ \sim 0.4 nm$ have been produced and many unusual properties were observed, such as superconductivity, leading to a transition temperature $T_c\sim 15^oK$, much larger…
We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…
Dependences of low temperature behavior and anisotropy of various physical quantities for pure unconventional superconductors upon a particular form of momentum direction dependence for the superconducting order parameter (within the…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
Low-energy rattling modes and their effects on superconductivity are studied in the cage compound GaxV2Al20. A series of polycrystalline samples of 0 < x =< 0.6 are examined through resistivity, magnetic susceptibility, and heat capacity…
We outline a general approach to the computation of transport properties of interacting systems at low temperetures and frequencies. We show that if the fixed point and the irrelevant operators around it are known, then by studying the…
Two families of high temperature superconductors whose critical temperatures are higher than 50K are known. One is the copper oxides and the other is the iron-based superconductors. Comparisons of mechanisms between these two in terms of…
Conductivity due to superconducting fluctuations studied in optimally doped YBa2Cu3O7-d films displays a stronger decay law in temperature than explainable by theory. A formula is proposed, which fits the data very well with two…
Long nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 \AA, length 0.1 - 1 mm) were prepared. Electrical conduction of these nanowires is studied over a temperature range 1.5 - 350 K. It is found that…
Pure amorphous solids are traditionally considered to set the lower bound of thermal conductivity due to their disordered atomic structure that impedes vibrational energy transport. However, the lower limits for thermal conductivity in…
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly…
We present very low temperature Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements of a W based amorphous thin film grown with focused-ion-beam. In particular, we address the superconducting properties close to the border,…