Related papers: Electron-electron scatttering in Sn-doped indium o…
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
We report the study of magnetic and orbital order in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ epitaxial thin films grown on (LaAlO$_3$)$_{0.3}$-(SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{0.7}$ (LSAT) (011)$_c$. In a new experimental approach, the polarization and…
The relaxation rate in Nb-doped strontium titanate involving different scattering channels is investigated theoretically. It is demonstrated that the total relaxation rate in SrTiO_{3} is provided mainly by two mechanisms. The Baber…
The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin…
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity…
50nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum DC sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4K was found to be MS4K = 3.28T for samples…
Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to…
We have prepared high-quality epitaxial thin films of CaRuO$_3$ with residual resistivity ratios up to 55. Shubnikov-de Haas oscillations in the magnetoresistance and a $T^2$ temperature dependence in the electrical resistivity only below…
We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system (2DES) at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a…
We present a simple and efficient approximation to the electron-phonon scattering rate suitable for high-throughput screening of candidate materials for thermoelectric devices, based on electronic transport. The method is applied to…
In a recently developed methodology termed photon induced near-field electron microscopy (PINEM), the inelastic scattering of electrons off illuminated nanostructures provides direct experimental access to the structure of optical…
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…
In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source. Nominally single-phase, epitaxial films were…
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control…
First principles-based predictions of lattice thermal conductivity (TC) from perturbation theory have achieved significant success. Usually, it only included three-phonon (3ph) scattering processes, only recently four-phonon (4ph)…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
We propose to use the near-threshold electron scattering data for atoms to guide the reliable experimental determination of their electron affinities (EAs), extracted using the Wigner Threshold Law, from laser photodetachment threshold…