Related papers: Germanium crystals on silicon show their light
We consider light absorption in a germanium grating placed on top of photonic-crystalline substrate. Such a system supports an optical Tamm state decoupled from the continuous spectrum with its frequency within the photonic band gap. We…
The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota…
Grain boundaries (GBs) are defects originating in multi-crystalline silicon during crystal growth for device Si solar cell fabrication. The presence of GBs changes the coordination of Si, making it advantageous for charge carriers to…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness…
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam…
Diffraction is a manifestation of light at edge due to its wavelike nature. The well-known diffraction phenomena are Fresnel and Fraunhofer, they find variety of applications individually. But the synergy of two phenomena is not studied and…
Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe…
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation…
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we…
We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors.…
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology…
The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics.…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon…