Related papers: Germanium crystals on silicon show their light
The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…
We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic…
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to…
Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We…
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
Band gap tuning and dielectric properties of small organic ligands adsorbed on bidimensional germanium monolayers (germanene) have been investigated using first-principles calculations. We show that the adsorption of these small groups…
Gallium is a plasmonic material offering ultraviolet to near-infrared tunability, facile and scalable preparation, and good stability of nanoparticles. In our contribution, we experimentally demonstrate the link between the shape and size…
The possibility of quantum computing with spins in germanium nanoscale transistors has recently attracted interest since it promises highly tuneable qubits that have encouraging coherence times. We here present the first complete theory of…
Despite its excellent performance in microelectronic industry, silicon was not able to perform well in photonic devices arena. This is because the silicon has never been a good optical source mainly due to its indirect band gap structure.…
In an ideal germanium detector, fully-absorbed monoenergetic gamma-rays will appear in the measured spectrum as a narrow peak, broadened into a Gaussian of width determined only by the statistical properties of charge cloud generation and…
Germanium (Ge) has emerged as a contender for scalable solid-state spin qubits. This interest stems from the numerous attractive properties of hole spin in Ge low-dimensional systems and their compatibility with the standards of silicon…
Germanium Selenide (GeSe) is a van der Waals-bonded layered material with promising optoelectronic properties, which has been experimentally synthesized for 2D semiconductor applications. In the monolayer, due to reduced dimensionality and,…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability…