Related papers: Germanium crystals on silicon show their light
The concept of a gamma-ray telescope based on a Laue lens offers the possibility to increase the sensitivity by more than an order of magnitude with respect to existing instruments. Laue lenses have been developed by our collaboration for…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered.…
Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress,…
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its…
The research investigates coherent interactions between sub-GeV electrons and oriented scintillator crystals, leading to enhanced electromagnetic (EM) radiation. Experiments at Mainz Mikrotron (MAMI) involved PWO, BGO, and CsI crystals…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a technique which allows defect free material growth. The…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…
Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically…
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder…
Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is…
Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e.,…
We demonstrate assembly of di-, tri- and tetrameric Si clusters on the graphene surface using sub-atomically focused electron beam of a scanning transmission electron microscope. Here, an electron beam is used to introduce Si substitutional…