Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe crystalline polymorphs induced by either global annealing at moderate temperatures or localized laser-induced heating. The highly conductive gamma-GeSe transforms into semiconducting, single-crystalline alpha-GeSe while preserving a well-aligned crystal orientation. The distinct structural and electronic properties at the gamma-GeSe/alpha-GeSe interface were investigated by transmission electron microscopy analysis. We propose that the clustering of Ge vacancies in the gamma-GeSe phase at elevated temperatures is a key mechanism driving the transition, leading to the formation of alpha-GeSe through the segregation of a minor GeSe2 phase. Furthermore, we observe a high electrical resistance contrast of approximately 10^7 between gamma-GeSe and alpha-GeSe, underscoring the potential of GeSe as a model polymorphic system for electronic applications, including phase-change memory.
@article{arxiv.2508.17997,
title = {Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast},
author = {Joonho Kim and Kihyun Lee and Joong-Eon Jung and Han Joo Lee and Seongil Im and Kwanpyo Kim},
journal= {arXiv preprint arXiv:2508.17997},
year = {2025}
}