Related papers: Strain evolution in GaN Nanowires: from free-surfa…
We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the…
Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…
Flexible strain gauges with 88% optical transmittance, of reduced graphene oxide (rGO) on poly dimethylsiloxne membranes, are produced form monolayers of graphene oxide assembled into densely packed sheets at an immiscible hexane/water…
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their…
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
We theoretically study the transmittance for normal incidence of linearly polarized light between two media separated by a strained graphene monolayer. We analytically characterize the degree of dichroism and the transparency of graphene as…
The mechanical properties of Cu/Nb metallic nanolaminates with different layer thickness (7, 16, 34 and 63 nm) were studied by means of micropillar compression tests from room temperature to 400 C. Both strain-rate jump and constant strain…
Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene…
The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the…
Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding…
Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…
As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of years. The optical and electrical properties of this system…
In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x…
GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets…
We investigate the relaxation of rectangular wrinkled thin films intrinsically containing an initial strain gradient. A preferential rolling direction, depending on wrinkle geometry and strain gradient, is theoretically predicted and…
Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to…
We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of…
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A…
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution…