Related papers: Giant magnetoresistance in the variable range hopp…
In an attempt to understand quantitatively the remarkable discoveries of metal-insulator transitions in two-dimensional systems, we generalize Mott's variable range hopping theory to the situation with strong Coulomb interaction. In our…
The tunneling magnetoresistance (TMR) of a hexagonal array of dipolar coupled anisotropic magnetic nanoparticles is studied using a resistor network model and a realistic micromagnetic configuration obtained by Monte Carlo simulations.…
We study the magnetoresistance of two-dimensional bosonic Anderson insulators. We describe the change in spatial decay of localized excitations in response to a magnetic field, which is given by an interference sum over alternative…
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By…
At low temperature and for finite spin scattering in a weakly disordered metal, for a certain value, predicted from our theory, of the material-dependent paramagnon interaction, the total conductivity becomes highly sensitive to the orbital…
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized…
It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
We present a review of recent advances in the study of many-body effects in magnetic nanoparticles. Considering classical spins on a lattice coupled by the exchange interaction in the presence of the bulk and surface anisotropy, we…
We study the problem of two particles with Coulomb repulsion in a two-dimensional disordered potential in the presence of a magnetic field. For the regime, when without interaction all states are well localized, it is shown that above a…
Transverse NMR relaxation from spins diffusing through a random magnetic medium is sensitive to its structure on a mesoscopic scale. In particular, this results in the time-dependent relaxation rate. We show analytically and numerically…
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…
In this paper, we study the interacting random particles with power-law long-rang hopping. Via the multi-scale analysis arguments for the Green's function, we establish the power-law localization for all energy with strong disorder.
We show that the tunnel coupling between semiclassical states localized in different minima of a smooth random potential increases when magnetic field is applied. This increase originates from the difference in gauge factors which electron…
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found…
We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic electronic-structure calculations. In particular we investigate the role of defects in the contact region in order to explain…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
The classical laws of physics are usually invariant under time reversal. Here, we reveal a novel class of magnetomechanical effects rigorously breaking time-reversal symmetry. The effect is based on the mechanical rotation of a hard magnet…
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…