Related papers: Giant magnetoresistance in the variable range hopp…
We propose a random matrix theory describing the influence of a time dependent external field on the average magnetoresistance of open quantum dots. The effect is taken into account in all orders of perturbation theory, and the result is…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein…
A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin flips on hopping transport by considering the effect of spin dynamics on an…
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal…
We present a detailed numerical analysis of the effect of a magnetic field on the transport properties of a `small-$N$' one-sided surface disordered wire. When time reversal symmetry is broken due to a magnetic field $B$, we find a strong…
Detailed theoretical derivation is given for the tunnel magnetoresistance via phonon-assisted hopping through an impurity chain under small magnetic field and a large bias window. This derivation provides a rigorous basis for the physical…
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be…
In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance…
The magnetic field dependent localization in a disordered quantum wire is considered nonperturbatively. An increase of an averaged localization length with the magnetic field is found, saturating at twice its value without magnetic field.…
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of…
We quantize the electromagnetic field in the presence of a static magnetic monopole, within the loop-representation formalism. We find that the loop-dependent wave functional becomes multivalued, in the sense that it acquires a dependence…
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability…
We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The…
The paramagnetic insulator to ferromagnetic metal transition in Lanthanum manganites and the associated magnetoresistive phenomena is treated by considering the localization due to random hopping induced by slowly fluctuating spin…
We theoretically and numerically show that longitudinal orbital currents in ferromagnets depend on the magnetization direction, which contribute to the anisotropic magnetoresistance (AMR). This orbital contribution to AMR arises from the…
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…
The influence of a magnetic field on the tunneling of an electron out of a confining plane is studied by a path integral method. We map this 3-d problem on to a 1-d one, and find that the tunneling is strongly affected by the field. Without…
In models of hopping disorder in the absence of external fields and at the band center, the electrons are less localized in space than the standard exponential Anderson localization. A signature of this anomalous localization is the square…
It has been observed that the low temperature magnetoresistance behaviour in polycrystalline colossal magnetoresistive (CMR) manganites differ significantly from the single crystals. The polycrystalline samples show large magnetoresistance…