Related papers: Giant magnetoresistance in the variable range hopp…
The magnetoresistance in the variable-range hopping regime due to Zeeman spin-splitting and intra-impurity interactions is calculated analytically and shown to be a universal function of $\mu H / kT \log R$. Good agreement with numerical…
We study an effect of moderate magnetic field on variable range hopping conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under…
We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…
Random matrix theory of the transition strengths is applied to transport in the strongly localized regime. The crossover distribution function between the different ensembles is derived and used to predict quantitatively the {\sl universal}…
We investigate theoretically the effect of a finite electric field on the resistivity of a disordered one-dimensional system in the variable-range hopping regime. We find that at low fields the transport is inhibited by rare fluctuations in…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
In solid state physics, giant magnetoresistance is the large change in electrical resistance due to an external magnetic field. Here we show that giant magnetoresistance is possible in a spin chain composed of weakly interacting layers of…
We study quantum interference effects on the transition strength for strongly localized electrons hopping on 2D square and 3D cubic lattices in a magnetic field B. In 2D, we obtain closed-form expressions for the tunneling probability…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…
We study magnetotransport in conical helimagnet crystals. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative…
The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin…
We study the variable-range hopping (VRH) of bosons in an array of sites with short-range interactions and a large characteristic coordination number. The latter leads to strong quantum interference phenomena yet allows for their analytical…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…
The results of computer simulation of particle motion over the plane with randomly distributed scatters are presented. They are used to analyse the influence of scattering anisotropy on the negative magnetoresistance due to weak…
The magnetic response of strongly localized electrons to a time-dependent vector potential is considered. The orbital magnetic moment of the system, away from steady-state conditions, is obtained. The expression involves the tunneling and…