Related papers: Phase-space for the breakdown of the quantum Hall …
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum…
The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K…
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…
We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial…
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…
We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…
We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in…
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and…
The effect of strong long-range disorder on the quantization of the Hall conductivity $\sigma_{xy}$ in graphene is studied numerically. It is shown that increasing Landau-level mixing progressively destroys all plateaus in $\sigma_{xy}$…
We analyze a gap equation for the propagator of Dirac quasiparticles and conclude that in graphene in a magnetic field, the order parameters connected with the quantum Hall ferromagnetism dynamics and those connected with the magnetic…
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…
We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field…
Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two…
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima…